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FEATURES Operates from +1.7 V to 18 V Low Supply Current: 15 A/Amplifier Low Offset Voltage: 75 V Outputs Sink and Source: 8 mA No Phase Reversal Single- or Dual-Supply Operation High Open-Loop Gain: 600 V/mV Unity-Gain Stable APPLICATIONS Digital Scales Strain Gages Portable Medical Equipment Battery-Powered Instrumentation Temperature Transducer Amplifier
OUT A -IN A +IN A V-
Precision, Micropower Operational Amplifiers OP193/OP293/OP493*
PIN CONFIGURATIONS 8-Lead SO (S Suffix)
NULL -IN A +IN A V- NC V+
8-Lead Epoxy DIP (P Suffix)
NULL 1 -IN A 2 +IN A 3 V- 4
OP193
8 7 6 5
NC V+ OUT A NULL
OP193
OUT A NULL
NC = NO CONNECT
8-Lead SO (S Suffix)
V+
8-Lead Epoxy DIP (P Suffix)
GENERAL DESCRIPTION
The OP193 family of single-supply operational amplifiers features a combination of high precision, low supply current and the ability to operate at low voltages. For high performance in single-supply systems the input and output ranges include ground, and the outputs swing from the negative rail to within 600 mV of the positive supply. For low voltage operation the OP193 family can operate down to 1.7 volts or 0.85 volts. The combination of high accuracy and low power operation make the OP193 family useful for battery-powered equipment. Its low current drain and low voltage operation allow it to continue performing long after other amplifiers have ceased functioning either because of battery drain or headroom. The OP193 family is specified for single +2 volt through dual 15 volt operation over the HOT (-40C to +125C) temperature range. They are available in plastic DIPs, plus SOIC surfacemount packages.
OP293
OUT B -IN B +IN B
OUT A 1 -IN A 2 +IN A 3 V- 4
OP293
8 7 6 5
V+ OUT B -IN B +IN B
14-Lead Epoxy DIP (P Suffix)
16-Lead Wide Body SOL (S Suffix)
OUT A -IN A +IN A V+ +IN B -IN B OUT B NC OUT D -IN D +IN D V- +IN C -IN C OUT C NC
OUT A 1 -IN A 2 +IN A 3 V+ 4 +IN B 5 -IN B 6 OUT B 7
14 OUT D 13 -IN D 12 +IN D
OP493
OP493
11 V- 10 +IN C 9 8
-IN C OUT C
NC = NO CONNECT
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2002
OP193/OP293/OP493-SPECIFICATIONS
ELECTRICAL SPECIFICATIONS (@ V =
S
15.0 V, TA = 25 C unless otherwise noted)
"E" Grade Min Typ Max 75 175 100 200 125 225 15 2 +13.5 116 "F" Grade Min Typ Max 150 250 250 350 275 375 20 4 +13.5 116 Unit V V V V V V nA nA V dB dB V/mV V/mV V/mV V/mV V/mV V/mV V/mV V/mV V/mV V V/C V V V V V V mA dB dB 30 65 0.05 3 15 35 120 A nV/Hz pA/Hz V p-p V/ms kHz dB
Parameter INPUT CHARACTERISTICS Offset Voltage
Symbol VOS
Conditions OP193 OP193, -40C TA +125C OP293 OP293, -40C TA +125C OP493 OP493, -40C TA +125C VCM = 0 V, -40C TA +125C VCM = 0 V, -40C TA +125C -14.9 VCM +14 V -14.9 VCM +14 V, -40C TA +125C RL = 100 k, -10 V VOUT +10 V -40C TA +85C -40C TA +125C RL = 10 k, -10 V VOUT +10 V -40C TA +85C -40C TA +125C RL = 2 k, -10 V VOUT +10 V -40C TA +85C -40C TA +125C Note 1 Note 2 IL = 1 mA IL = 1 mA, -40C TA +125C IL = 5 mA IL = -1 mA IL = -1 mA, -40C TA +125C IL = -5 mA
Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection
IB IOS VCM CMRR
-14.9 100 97 500 300
-14.9 97 94 500 300
Large Signal Voltage Gain
AVO
300 350 200 150 200 125 100 0.2 14.1 14.0 13.9 14.2 150 1.75 14.1 14.0 13.9 200 125 350 200
300
Large Signal Voltage Gain
AVO
150
Large Signal Voltage Gain
AVO
100 300
Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High
VOS VOS/T VOH
14.2
Output Voltage Swing Low
VOL
14.1 -14.7 -14.6 -14.4 +14.2 -14.1 25
14.1 -14.7 -14.6 -14.4 +14.2 -14.1 25
Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio
ISC PSRR VS = 1.5 V to 18 V VS = 1.5 V to 18 V, -40C TA +125C -40C TA +125C, RL = VOUT = 0 V, VS = 18 V f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 k VOUT = 10 V p-p, RL = 2 k, f = 1 kHz 100 97
120
97 94 30
120
Supply Current/Amplifier NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Channel Separation
ISY
en in en p-p SR GBP
65 0.05 3 15 35 120
NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the -40C to +25C delta and the +25C to +125C delta. Specifications subject to change without notice.
-2-
REV. B
OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS (@ V = 5.0 V, V
S CM
= 0.1 V, TA = 25 C unless otherwise noted)
"E" Grade Min Typ Max 75 175 100 200 125 225 15 2 4 116 "F" Grade Min Typ Max 150 250 250 350 275 375 20 4 4 116 Unit V V V V V V nA nA V dB dB V/mV V/mV V/mV V/mV V/mV V/mV V V/C V V V V mV mV mV mV mV mV mA dB dB A nV/Hz pA/Hz V p-p V/ms kHz
Parameter INPUT CHARACTERISTICS Offset Voltage
Symbol VOS
Conditions OP193 OP193, -40C TA +125C OP293 OP293, -40C TA +125C OP493 OP493, -40C TA +125C -40C TA +125C -40C TA +125C 0.1 VCM 4 V 0.1 VCM 4 V, -40C TA +125C RL = 100 k, 0.03 VOUT 4.0 V -40C TA +85C -40C TA +125C RL = 10 k, 0.03 VOUT 4.0 V -40C TA +85C -40C TA +125C Note 1 Note 2 IL = 100 A IL = 1 mA IL = 1 mA, -40C TA +125C IL = 5 mA IL = -100 A IL = -100 A, -40C TA +125C No Load IL = -1 mA IL = -1 mA, -40C TA +125C IL = -5 mA
Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection
IB IOS VCM CMRR
0 100 92 200 125
0 96 92 200 125
Large Signal Voltage Gain
AVO
130 75 50 70 0.2 4.4 4.4 150 1.25 75 50
130
Large Signal Voltage Gain
AVO
70 300
Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High
VOS VOS/T VOH
4.1 4.0 4.0
4.1 4.0 4.0 160 220
4.4 4.4
Output Voltage Swing Low
VOL
4.4 140
4.4 140
160 220
5 280
400 500 900
5 280
400 500 900
Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio
ISC PSRR VS = 1.7 V to 6.0 V VS = 1.5 V to 18 V, -40C TA +125C VCM = 2.5 V, RL = f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 k 100 94
700 8 120
700 8 97 90 120
Supply Current/Amplifier NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product
ISY en in en p-p SR GBP
14.5 65 0.05 3 12 35
14.5 65 0.05 3 12 35
NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the -40C to +25C delta and the +25C to +125C delta. Specifications subject to change without notice.
REV. B
-3-
OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS (@ V = 3.0 V, V
S CM
= 0.1 V, TA = 25 C unless otherwise noted)
"E" Grade Min Typ Max 75 175 100 200 125 225 15 2 2 116 "F" Grade Min Typ Max 150 250 250 350 275 375 20 4 2 116 Unit V V V V V V nA nA V dB dB V/mV V/mV V/mV V V/C V V V mV mV mV mA
Parameter INPUT CHARACTERISTICS Offset Voltage
Symbol VOS
Conditions OP193 OP193, -40C TA +125C OP293 OP293, -40C TA +125C OP493 OP493, -40C TA +125C -40C TA +125C -40C TA +125C
Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection
Large Signal Voltage Gain
Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High
0.1 VCM 2 V 0.1 VCM 2 V, -40C TA +125C RL = 100 k, 0.03 VOUT 2 V AVO -40C TA +85C -40C TA +125C VOS Note 1 VOS/T Note 2 VOH IL = 1 mA IL = 1 mA, -40C TA +125C IL = 5 mA IL = -1 mA IL = -1 mA -40C TA +125C IL = -5 mA
IB IOS VCM CMRR
0 97 90 100 75
0 94 87 100 75
100 0.2 2.1 1.9 1.9 2.14 150 1.25 2.1 1.9 1.9 400 500 900
100 300
2.14
Output Voltage Swing Low
VOL
2.1 280
2.1 280
400 500 900
Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Channel Separation
ISC PSRR ISY VS en in en p-p SR GBP f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 k VOUT = 10 V p-p, RL = 2 k, f = 1 kHz VS = +1.7 V to +6 V, -40C TA +125C VCM = 1.5 V, RL = -40C TA +125C 100 94
700 8
700 8 97 90
+2
14.5 22 22 18 65 0.05 3 10 25 120
+2
14.5 22 22 18 65 0.05 3 10 25 120
dB A A V nV/Hz pA/Hz V p-p V/ms kHz dB
NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the -40C to +25C delta and the +25C to +125C delta. Specifications subject to change without notice.
-4-
REV. B
OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS (@ V = 2.0 V, V
S CM
= 0.1 V, TA = 25 C unless otherwise noted)
"E" Grade Min Typ Max 75 175 100 175 125 225 15 2 1 70 150 100 94 13.2 20 25 18 65 0.05 3 10 25 97 90 13.2 20 25 18 65 0.05 3 10 25 "F" Grade Min Typ Max 150 250 250 350 275 375 20 4 1 70 300 Unit V V V V V V nA nA V V/mV V/mV V
Parameter INPUT CHARACTERISTICS Offset Voltage
Symbol VOS
Conditions OP193 OP193, -40C TA +125C OP293 OP293, -40C TA +125C OP493 OP493, -40C TA +125C -40C TA +125C -40C TA +125C RL = 100 k, 0.03 VOUT 1 V -40C TA +125C Note 1 VS = 1.7 V to 6 V, -40C TA +125C VCM = 1.0 V, RL = -40C TA +125C
Input Bias Current Input Offset Current Input Voltage Range Large Signal Voltage Gain Long Term Offset Voltage POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product
IB IOS VCM AVO VOS PSRR ISY VS en in en p-p SR GBP
0 60
0 60
+2 f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 k
+2
dB A A V nV/Hz pA/Hz V p-p V/ms kHz
Specifications subject to change without notice.
REV. B
-5-
OP193/OP293/OP493
ABSOLUTE MAXIMUM RATINGS 1 ORDERING GUIDE
Model OP193ES* OP193ES-REEL* OP193ES-REEL7* OP193FP* OP193FS OP193FS-REEL OP193FS-REEL7 OP293ES OP293ES-REEL OP293ES-REEL7 OP293FP* OP293FS OP293FS-REEL OP293FS-REEL7 OP493ES* OP493ES-REEL* OP493FP* OP493FS* OP493FS-REEL* Temperature Range -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C -40C to +125C Package Description 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 16-Pin SOL 16-Pin SOL 14-Pin Plastic DIP 16-Pin SOL 16-Pin SOL Package Option SO-8 SO-8 SO-8 N-8 SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 N-8 SO-8 SO-8 SO-8 SOL-16 SOL-16 N-14 SOL-16 SOL-16
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . 18 V Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite Storage Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Operating Temperature Range OP193/OP293/OP493E, F . . . . . . . . . . . . -40C to +125C Junction Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300C Package Type 8-Pin Plastic DIP (P) 8-Pin SOIC (S) 14-Pin Plastic DIP (P) 16-Pin SOL (S) JA3 103 158 83 92 JC 43 43 39 27 Unit C/W C/W C/W C/W
NOTES 1 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 For supply voltages less than 18 V, the input voltage is limited to the supply voltage. 3 JA is specified for the worst case conditions; i.e., JA is specified for device in socket for PDIP, and JA is specified for device soldered in circuit board for SOIC package.
*Not for new design, obsolete April 2002.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP193/OP293/OP493 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
-6-
REV. B
Typical Performance Characteristics-OP193/OP293/OP493
200 VS TA 15V 25C PDIPS
NUMBER OF AMPLIFIERS
200 VS 3V VCM 0.1V TA 25C 450 120 PDIPS
150 VS 3V VCM 0.1V -40C TA 450 90 PDIPS
NUMBER OF AMPLIFIERS
450
120
80
80
NUMBER OF AMPLIFIERS
160
160
120
+125C
60
40
40
30
0 -75 -60 -45 -30 -15
0
15 30 45 60 75 V
0 -75 -60 -45 -30 -15 0
OFFSET -
15 30 45 60 75 OFFSET - V
0 0
0.2
0.4
0.6
0.8
1.0
TCVOS - V C
TPC 1. OP193 Offset Distribution, VS = 15 V
TPC 2. OP193 Offset Distribution, VS = +3 V
TPC 3. OP193 TCVOS Distribution, VS = +3 V
150 VS 15V -40C TA
NUMBER OF AMPLIFIERS
1
+125C
120
VS
5V
100
-PSRR
5V TA
VS 30V 25C
INPUT BIAS CURRENT - nA
120
0 -40C -1
PSRR - dB
450
PDIPS
80 +PSRR 60 40
90
60
-2
+125C
30
-3
+25C
20
0 0 0.2 0.4 0.6 0.8 1.0 TCVOS - V C
-4 0 1 2 3 4 COMMON-MODE VOLTAGE - V 5
0 10
100 1k FREQUENCY - Hz
10k
TPC 4. OP193 TCVOS Distribution, VS = 15 V
TPC 5. Input Bias Current vs. Common-Mode Voltage
TPC 6. PSRR vs. Frequency
120 TA 100
SLEW RATE - V/ms
25
40 SHORT CIRCUIT CURRENT - mA
25C
20 +SR -SR VS 15V 15 +SR -SR VS +5V
80 CMRR - dB 60 VS 40 20 0 10
VS
15V
30
+ISC VS 15V
| -ISC |
VS 20 15V
+5V
10
10
5
| -ISC |
0 -50 -25 VS +5V 0
+ISC VS +5V 25 50 75 100 125
100 1k FREQUENCY - Hz
10k
0 -50 -25
0
25
50
75
100
125
TEMPERATURE - C
TEMPERATURE - C
TPC 7. CMRR vs. Frequency
TPC 8. Slew Rate vs. Temperature
TPC 9. Short Circuit Current vs. Temperature
REV. B
-7-
OP193/OP293/OP493
0 INPUT OFFSET CURRENT - nA
INPUT BIAS CURRENT - nA
0
25 VS 18V
VS -2
15V
SUPPLY CURRENT - A
-0.5
-1
20
-0.10
VS +2V VCM 0.1V
15 VS +2V VCM 1V 10
-0.15
-3 VS +2V VCM 0.1V
-0.20 VS -0.25 -50 -25 15V 0 25 50 75 100 125
-4
5
-5 -50
-25
0
25
50
75
100
125
0 -50 -25
0
25
50
75
100
125
TEMPERATURE - C
TEMPERATURE - C
TEMPERATURE - C
TPC 10. Input Offset Current vs. Temperature
TPC 11. Input Bias Current vs. Temperature
TPC 12. Supply Current vs. Temperature
1000 VOLTAGE NOISE DENSITY - nV Hz 5V TA 100 VS 30V 25C
CURRENT NOISE DENSITY - pA Hz
1000 5V TA 100 VS 30V 25C
10000
DELTA FROM SUPPLY RAIL - mV
5V TA 1000 DELTA FROM VCC 100 DELTA FROM VEE 10
VS 30V 25C
10
10
1 0.1
1
10 100 FREQUENCY - Hz
1k
1 0.1 1 10 100 FREQUENCY - Hz 1k
1 0.1 1 10 100 1000 LOAD CURRENT - A 10000
TPC 13. Voltage Noise Density vs. Frequency
TPC 14. Current Noise Density vs. Frequency
TPC 15. Delta Output Swing from Either Rail vs. Current Load
2500
1000
60 TA 25C 5V VS
VS 15V -10V VOUT
VOLTAGE GAIN - V mV
2000
800
VOLTAGE GAIN - V mV
VS 15V -10V VOUT 1500
40
+10V
+10V
GAIN - dB
4V 50 75 100 125
600
20
1000 VS +5V 0.03V VOUT 500 4V
400 VS +5V 0.03V VOUT 200
0
0 -50 -25
0
25
50
75
100
125
0 -50 -25
0
25
-20 10 100 1k 10k FREQUENCY - Hz 100k
TEMPERATURE - C
TEMPERATURE - C
TPC 16. Voltage Gain (RL = 100 k) vs. Temperature
TPC 17. Voltage Gain (RL = 10 k) vs. Temperature
TPC 18. Closed-Loop Gain vs. Frequency, VS = 5 V
-8-
REV. B
OP193/OP293/OP493
60 TA VS 40
GAIN - dB
60 25C 15V 50
OVERSHOOT - %
60
40
20 GAIN 0
45
20
30 20 10
+OS RL
0
0 -OS RL -20 10 100 1k 10k FREQUENCY - Hz 100k 0 10 +OS | -OS | RL 10k 10000
-20 -45
100 1000 CAPACITIVE LOAD - pF
-40 100
-90 1k 10k 100k FREQUENCY - Hz 1M
TPC 19. Closed-Loop Gain vs. Frequency, VS = 15 V
TPC 20. Small Signal Overshoot vs. Capacitive Load
TPC 21. Open-Loop, Gain and Phase vs. Frequency
60 VS 40 PHASE 15V 90
V+
I1
+INPUT 2k
I2
I3
I4
Q5
PHASE - Degrees
GAIN - dB
2k Q1 -INPUT Q2
20 GAIN 0
45
Q6 Q4 Q7 Q3 Q8 D1 TO OUTPUT STAGE
0
-20
-45
OP293, OP493 ONLY
-40 100
-90 1k 10k 100k FREQUENCY - Hz 1M
R1A
R2A
I5
R1B R2B
I6
V-
TPC 22. Open-Loop, Gain and Phase vs. Frequency
NULLING TERMINALS (OP193 ONLY)
FUNCTIONAL DESCRIPTION
Figure 1. OP193/OP293/OP493 Equivalent Input Circuit
V+
The OP193 family of operational amplifiers are single-supply, micropower, precision amplifiers whose input and output ranges both include ground. Input offset voltage (VOS) is only 75 V maximum, while the output will deliver 5 mA to a load. Supply current is only 17 A. A simplified schematic of the input stage is shown in Figure 1. Input transistors Q1 and Q2 are PNP devices, which permit the inputs to operate down to ground potential. The input transistors have resistors in series with the base terminals to protect the junctions from over voltage conditions. The second stage is an NPN cascode which is buffered by an emitter follower before driving the final PNP gain stage. The OP193 includes connections to taps on the input load resistors, which can be used to null the input offset voltage, VOS. The OP293 and OP493 have two additional transistors, Q7 and Q8. The behavior of these transistors is discussed in the Output Phase Reversal section of this data sheet. The output stage, shown in Figure 2, is a noninverting NPN "totem-pole" configuration. Current is sourced to the load by emitter follower Q1, while Q2 provides current sink capability. When Q2 saturates, the output is pulled to within 5 mV of ground without an external pull-down resistor. The totem-pole output stage will supply a minimum of 5 mA to an external load, even when operating from a single 3.0 V power supply. REV. B
FROM INPUT STAGE
Q4 Q1 Q5
Q3 Q2
OUTPUT
I3
I2
I1
V-
Figure 2. OP193/OP293/OP493 Equivalent Output Circuit
By operating as an emitter follower, Q1 offers a high impedance load to the final PNP collector of the input stage. Base drive to Q2 is derived by monitoring Q1's collector current. Transistor Q5 tracks the collector current of Q1. When Q1 is on, Q5 keeps Q4 off, and current source I1 keeps Q2 turned off. When Q1 is driven to cutoff (i.e., the output must move toward V-), Q5 allows Q4 to turn on. Q4's collector current then provides the base drive for Q3 and Q2, and the output low voltage swing is set by Q2's VCE,SAT which is about 5 mV. -9-
PHASE - Degrees
VS 5V TA 25C AV 1 50mV VIN 150mV LOADS TO GND
+OS | -OS | RL 50k
VS 40 PHASE
5V 90
GAIN - dB
OP193/OP293/OP493
Driving Capacitive Loads
OP193 family amplifiers are unconditionally stable with capacitive loads less than 200 pF. However, the small signal, unity-gain overshoot will improve if a resistive load is added. For example, transient overshoot is 20% when driving a 1000 pF/ 10 k load. When driving large capacitive loads in unity-gain configurations, an in-the-loop compensation technique is recommended as illustrated in Figure 6.
Input Overvoltage Protection
weight, and high energy density relative to older primary cells. Most lithium cells have a nominal output voltage of 3 V and are noted for a flat discharge characteristic. The low supply voltage requirement of the OP193, combined with the flat discharge characteristic of the lithium cell, indicates that the OP193 can be operated over the entire useful life of the cell. Figure 3 shows the typical discharge characteristic of a 1 AH lithium cell powering the OP193, OP293, and OP493, with each amplifier, in turn, driving 2.1 Volts into a 100 k load.
4
LITHIUM SULPHUR DIOXIDE CELL VOLTAGE - V
As previously mentioned, the OP193 family of op amps use a PNP input stage with protection resistors in series with the inverting and noninverting inputs. The high breakdown of the PNP transistors, coupled with the protection resistors, provides a large amount of input protection from over voltage conditions. The inputs can therefore be taken 20 V beyond either supply without damaging the amplifier.
Output Phase Reversal--OP193
3
2 OP493 OP293 OP193
The OP193's input PNP collector-base junction can be forwardbiased if the inputs are brought more than one diode drop (0.7 V) below ground. When this happens to the noninverting input, Q4 of the cascode stage turns on and the output goes high. If the positive input signal can go below ground, phase reversal can be prevented by clamping the input to the negative supply (i.e., GND) with a diode. The reverse leakage of the diode will, of course, add to the input bias current of the amplifier. If input bias current is not critical, a 1N914 will add less than 10 nA of leakage. However, its leakage current will double for every 10C increase in ambient temperature. For critical applications, the collector-base junction of a 2N3906 transistor will add only about 10 pA of additional bias current. To limit the current through the diode under fault conditions, a 1 k resistor is recommended in series with the input. (The OP193's internal current limiting resistors will not protect the external diode.)
Output Phase Reversal--OP293 and OP493
1
0 0 1000 2000 3000 4000 5000 6000 7000 HOURS
Figure 3. Lithium Sulfur Dioxide Cell Discharge Characteristic with OP193 Family and 100 k Loads
Input Offset Voltage Nulling
The OP293 and OP493 include lateral PNP transistors Q7 and Q8 to protect against phase reversal. If an input is brought more than one diode drop (0.7 V) below ground, Q7 and Q8 combine to level shift the entire cascode stage, including the bias to Q3 and Q4, simultaneously. In this case Q4 will not saturate and the output remains low. The OP293 and OP493 do not exhibit output phase reversal for inputs up to -5 V below V- at +25C. The phase reversal limit at +125C is about -3 V. If the inputs can be driven below these levels, an external clamp diode, as discussed in the previous section, should be added.
Battery-Powered Applications
The OP193 provides two offset nulling terminals that can be used to adjust the OP193's internal VOS. In general, operational amplifier terminals should never be used to adjust system offset voltages. The offset null circuit of Figure 4 provides about 7 mV of offset adjustment range. A 100 k resistor placed in series with the wiper arm of the offset null potentiometer, as shown in Figure 5, reduces the offset adjustment range to 400 V and is recommended for applications requiring high null resolution. Offset nulling does not adversely affect TCVOS performance, providing that the trimming potentiometer temperature coefficient does not exceed 100 ppm/C.
V+
2
7
OP193
3 1 4 5
6
OP193 series op amps can be operated on a minimum supply voltage of 1.7 V, and draw only 13 A of supply current per amplifier from a 2.0 V supply. In many battery-powered circuits, OP193 devices can be continuously operated for thousands of hours before requiring battery replacement, thus reducing equipment downtime and operating cost. High performance portable equipment and instruments frequently use lithium cells because of their long shelf life, light
100k V-
Figure 4. Offset Nulling Circuit
-10-
REV. B
OP193/OP293/OP493
V+
R1 240k C1 1000pF R2 1.5M 2 7 V+ (2.5V TO 36V)
2
7
OP193
3 1 4 5
6
OP193
3 4 5
6 VOUT (1.23V @ 25C)
100k 100k V-
Q2 1
MAT-01AH
2 VBE2
7
Q1 6
Figure 5. High Resolution Offset Nulling Circuit
3
5
VBE1
A Micropower False-Ground Generator
Some single-supply circuits work best when inputs are biased above ground, typically at 1/2 of the supply voltage. In these cases a false ground can be created by using a voltage divider buffered by an amplifier. One such circuit is shown in Figure 6. This circuit will generate a false-ground reference at 1/2 of the supply voltage, while drawing only about 27 A from a 5 V supply. The circuit includes compensation to allow for a 1 F bypass capacitor at the false-ground output. The benefit of a large capacitor is that not only does the false ground present a very low dc resistance to the load, but its ac impedance is low as well. The OP193 can both sink and source more than 5 mA, which improves recovery time from transients in the load current.
5V OR 12V 10k 0.022 F 240k 7 100
V1
R3 68k VBE
R4 130k R5 20k OUTPUT ADJUST
Figure 7. A Battery-Powered Voltage Reference
A Single-Supply Current Monitor
2
OP193
3 240k 1F 4
6
2.5V OR 6V
1F
Current monitoring essentially consists of amplifying the voltage drop across a resistor placed in series with the current to be measured. The difficulty is that only small voltage drops can be tolerated, and with low precision op amps this greatly limits the overall resolution. The single-supply current monitor of Figure 8 has a resolution of 10 A and is capable of monitoring 30 mA of current. This range can be adjusted by changing the current sense resistor R1. When measuring total system current, it may be necessary to include the supply current of the current monitor, which bypasses the current sense resistor, in the final result. This current can be measured and calibrated (together with the residual offset) by adjustment of the offset trim potentiometer, R2. This produces a deliberate temperature dependent offset. However, the supply current of the OP193 is also proportional to temperature, and the two effects tend to track. Current in R4 and R5, which also bypasses R1, can be adjusted via a gain trim.
V+
Figure 6. A Micropower False-Ground Generator
A Battery-Powered Voltage Reference
The circuit of Figure 7 is a battery-powered voltage reference that draws only 17 A of supply current. At this level, two AA alkaline cells can power this reference for more than 18 months. At an output voltage of 1.23 V @ 25C, drift of the reference is only 5.5 V/C over the industrial temperature range. Load regulation is 85 V/mA with line regulation at 120 V/V. Design of the reference is based on the Brokaw bandgap core technique. Scaling of resistors R1 and R2 produces unequal currents in Q1 and Q2. The resulting VBE across R3 creates a temperature-proportional voltage (PTAT) which, in turn, produces a larger temperature-proportional voltage across R4 and R5, V1. The temperature coefficient of V1 cancels (first order) the complementary to absolute temperature (CTAT) coefficient of VBE1. When adjusted to 1.23 V @ 25C, output voltage tempco is at a minimum. Bandgap references can have start-up problems. With no current in R1 and R2, the OP193 is beyond its positive input range limit and has an undefined output state. Shorting Pin 5 (an offset adjust pin) to ground forces the output high under these circumstances and ensures reliable startup without significantly degrading the OP193's offset drift. REV. B -11-
TO CIRCUIT UNDER TEST 3 ITEST 2 1 R1 1 R2 100k R2 9.9k 7
OP193
4 5
6 VOUT = 100mV/mA(ITEST)
R5 100
R3 100k
Figure 8. Single-Supply Current Monitor
OP193/OP293/OP493
A Single-Supply Instrumentation Amplifier
Designing a true single-supply instrumentation amplifier with zero-input and zero-output operation requires special care. The traditional configuration, shown in Figure 9, depends upon amplifier A1's output being at 0 V when the applied commonmode input voltage is at 0 V. Any error at the output is multiplied by the gain of A2. In addition, current flows through resistor R3 as A2's output voltage increases. A1's output must remain at 0 V while sinking the current through R3, or a gain error will result. With a maximum output voltage of 4 V, the current through R3 is only 2 A, but this will still produce an appreciable error.
R1 20k R2 1.98M 5V V+ A1 1/2 OP293 -IN V- ISINK R3 20k R4 1.98M 5V V+ A2 1/2 OP293 V- VOUT
R1 20k
R2 1.98M 5V V+ A1 1/2 OP293 R3 20k R4 1.98M
-IN
V-
5V 10k
Q1 VN2222 +IN
Q2
5V V+ A2 1/2 OP293 V- VOUT
Figure 10. An Improved Single-Supply, 0 VIN, 0 VOUT Instrumentation Amplifier
A Low-Power, Temperature to 4-20 mA Transmitter
+IN
Figure 9. A Conventional Instrumentation Amplifier
One solution to this problem is to use a pull-down resistor. For example, if R3 = 20 k, then the pull-down resistor must be less than 400 . However, the pull-down resistor appears as a fixed load when a common-mode voltage is applied. With a 4 V common-mode voltage, the additional load current will be 10 mA, which is unacceptable in a low power application. Figure 10 shows a better solution. A1's sink current is provided by a pair of N-channel FET transistors, configured as a current mirror. With the values shown, sink current of Q2 is about 340 A. Thus, with a common-mode voltage of 4 V, the additional load current is limited to 340 A versus 10 mA with a 400 resistor.
A simple temperature to 4-20 mA transmitter is shown in Figure 11. After calibration, this transmitter is accurate to 0.5C over the -50C to +150C temperature range. The transmitter operates from 8 V to 40 V with supply rejection better than 3 ppm/V. One half of the OP293 is used to buffer the VTEMP pin, while the other half regulates the output current to satisfy the current summation at its noninverting input:
I OUT +
VTEMP x R6 + R7 R2 x R10
(
) -V
SET
R2 + R6 + R7 R2 x R10
The change in output current with temperature is the derivative of the transfer function:
VTEMP I OUT T =
R6 + R7 T R2 x R10
(
)
1N4002 R6 3k SPAN TRIM V+ 8V TO 40V
REF-43BZ VI N 2 VOUT 6 VTEMP 3 GND 4 3 R1 10k 2 8 1/2 OP293 4 1 VTEMP R2 1k
R4 20k
R7 5k 6 1/2 OP293 5 7 R8 1k 2N1711 R9 100k
R3 100k
R5 5k
VSET ZERO TRIM
ALL RESISTORS 1/4W, 5% UNLESS OTHERWISE NOTED
R10 100 1%, 1/2 W IOUT
RLOAD
Figure 11. Temperature to 4-20 mA Transmitter
-12-
REV. B
OP193/OP293/OP493
From the formulas, it can be seen that if the span trim is adjusted before the zero trim, the two trims are not interactive, which greatly simplifies the calibration procedure. Calibration of the transmitter is simple. First, the slope of the output current versus temperature is calibrated by adjusting the span trim, R7. A couple of iterations may be required to be sure the slope is correct. Once the span trim has been completed, the zero trim can be made. Remember that adjusting the zero trim will not affect the gain. The zero trim can be set at any known temperature by adjusting R5 until the output current equals:
VCONTROL 3 R2 200k R3 100k R4 200k TRIANGLE OUT R6 200k R8 200k 5V R7 200k C1 75nF R1 200k 5V 2 8 A1 1/2 OP293 4 5 1 5V R5 200k 6 A2 1/2 OP293 7 SQUARE OUT
I OUT =
I FS (TAMBIENT - TMIN ) + 4 mA TOPERATING
CD4066
1 IN/OUT S1 2 OUT/IN CONT 13 VDD 14 5V
Table I shows the values of R6 required for various temperature ranges.
Table I. R6 Values vs. Temperature
3 OUT/IN
S2
CONT 12
Temp Range 0C to 70C -40C to +85C -55C to +150C
R6 10 k 6.2 k 3 k
4 IN/OUT
IN/OUT 11
5 CONT
S3
OUT/IN
10
6 CONT S4 7 VSS
OUT/IN
9
5V
A Micropower Voltage Controlled Oscillator
An OP293 in combination with an inexpensive quad CMOS analog switch forms the precision VCO of Figure 12. This circuit provides triangle and square wave outputs and draws only 50 A from a single 5 V supply. A1 acts as an integrator; S1 switches the charging current symmetrically to yield positive and negative ramps. The integrator is bounded by A2 which acts as a Schmitt trigger with a precise hysteresis of 1.67 volts, set by resistors R5, R6, and R7, and associated CMOS switches. The resulting output of A1 is a triangle wave with upper and lower levels of 3.33 and 1.67 volts. The output of A2 is a square wave with almost rail-to-rail swing. With the components shown, frequency of operation is given by the equation:
IN/OUT
8
Figure 12. Micropower Voltage Controlled Oscillator
A Micropower, Single-Supply Quad Voltage Output 8-Bit DAC
f OUT = VCONTROL V x 10 Hz / V
but this can easily be changed by varying C1. The circuit operates well up to 500 Hz.
The circuit of Figure 13 uses the DAC8408 CMOS quad 8-bit DAC and the OP493 to form a single-supply quad voltage output DAC with a supply drain of only 140 A. The DAC8408 is used in the voltage switching mode and each DAC has an output resistance (10 k) independent of the digital input code. The output amplifiers act as buffers to avoid loading the DACs. The 100 k resistors ensure that the OP493 outputs will swing to within 1/2 LSB of ground, i.e.:
1 2
x
1.23 V 256
= 3 mV
REV. B
-13-
OP193/OP293/OP493
5V 3.6k 4 AD589 1.23V 5V 1 VDD 4 IOUT1A DAC A VREFA 1/4 DAC8408 2 3 5V
A Single-Supply Micropower Quad Programmable-Gain Amplifier
2 A 1/4 OP493 1 VOUTA
The combination of the quad OP493 and the DAC8408 quad 8-bit CMOS DAC creates a quad programmable-gain amplifier with a quiescent supply drain of only 140 A (Figure 14). The digital code present at the DAC, which is easily set by a microprocessor, determines the ratio between the fixed DAC feedback resistor and the resistance that the DAC feedback ladder presents to the op amp feedback loop. The gain of each amplifier is:
11
R1 100k
VOUT VIN
=
256 n
5 IOUT2A/2B
6 DAC B VREFB 1/4 DAC8408 B 1/4 OP493 8 5 7 VOUTB R2 100k
where n equals the decimal equivalent of the 8-bit digital code present at the DAC. If the digital code present at the DAC consists of all zeros, the feedback loop will be open causing the op amp to saturate. The 10 M resistors placed in parallel with the DAC feedback loop eliminates this problem with a very small reduction in gain accuracy. The 2.5 V reference biases the amplifiers to the center of the linear region providing maximum output swing.
6 IOUT1B
13 25 IOUT1C DAC C VREFC 1/4 DAC8408 C 1/4 OP493 27 12 14 VOUTC R3 100k
24 IOUT2C/2D
9 DAC D V REFD 1/4 DAC8408 D 1/4 OP493 21 10 8 VOUTD R4 100k
23 IOUT1D
OP493
DAC DATA BUS PINS 9(LSB)-16(MSB) A/B R/W 17 18 19 20 DIGITAL CONTROL SIGNALS
DAC8408ET
DGND 28
DS1 DS2
Figure 13. Micropower Single-Supply Quad VoltageOutput 8-Bit DAC
-14-
REV. B
OP193/OP293/OP493
C1 0.1 F VINA 3 VDD RFBA VREFA 2 R1 10M 1 4 5V
DAC A 1/4 DAC8408
IOUT1A
4
2 A 1/4 OP493 3 1 VOUTA
C2 0.1 F VI N B 7
IOUT2A/2B RFBB VREFB DAC B 1/4 DAC8408
5
11
8 R2 10M 6 6 B 1/4 OP493 7 VOUTB
IOUT1B
5 C3 0.1 F VI N C 26 RFBC VREFC IOUT1C DAC C 1/4 DAC8408 27 25 R3 10M 9
C 1/4 OP493 10 IOUT2C/2D 24
8
VOUTC
C4 0.1 F VI N D 22
RFBD
VREFD DAC D 1/4 DAC8408
21 R4 10M
IOUT1D
23
13 D 1/4 OP493 14 VOUTD
12 DAC DATA BUS PINS 9(LSB)-16(MSB)
OP493
17 DIGITAL CONTROL SIGNALS 18 19 20 A/B R/W DS1 DS2 DGND 28
DAC8408ET
2.5V REFERENCE VOLTAGE
Figure 14. Single-Supply Micropower Quad Programmable-Gain Amplifier
REV. B
-15-
OP193/OP293/OP493
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead SO (S Suffix)
8
8 5 0.1574 (4.00) 0.1497 (3.80) 1 4 0.2440 (6.20) 0.2284 (5.80)
8-Lead Epoxy DIP (P Suffix)
C00295-0-1/02(B) PRINTED IN U.S.A.
5 0.280 (7.11) 0.240 (6.10) 1 4
PIN 1
PIN 1
0.430 (10.92) 0.348 (8.84)
0.0196 (0.50) x 45 0.0099 (0.25)
0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.195 (4.95) 0.115 (2.93)
0.1968 (5.00) 0.1890 (4.80) 0.0098 (0.25) 0.0040 (0.10) 0.0500 (1.27) BSC 0.0688 (1.75) 0.0532 (1.35) 0.0192 (0.49) 0.0138 (0.35) 8 0
0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.100 (2.54) BSC
0.0098 (0.25) 0.0075 (0.19)
0.0500 (1.27) 0.0160 (0.41)
0.130 (3.30) MIN SEATING PLANE
0.015 (0.381) 0.008 (0.204)
0.022 (0.558) 0.014 (0.356)
0.070 (1.77) 0.045 (1.15)
14-Lead Epoxy DIP (P Suffix)
16-Lead Wide Body SOL (S Suffix)
14 PIN 1 1 0.795 (20.19) 0.725 (18.42) 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.022 (0.558) 0.014 (0.356)
8 0.280 (7.11) 0.240 (6.10) 7 0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.195 (4.95) 0.115 (2.93)
16
9 0.2992 (7.60) 0.2914 (7.40) 0.4193 (10.65) 0.3937 (10.00)
PIN 1 1 8
0.130 (3.30) MIN SEATING PLANE
0.015 (0.381) 0.008 (0.204)
0.4133 (10.50) 0.3977 (10.00)
0.1043 (2.65) 0.0926 (2.35)
0.0291 (0.74) x 45 0.0098 (0.25)
0.100 (2.54) BSC
0.070 (1.77) 0.045 (1.15)
0.0118 (0.30) 0.0040 (0.10)
0.0500 (1.27) BSC
0.0192 (0.49) 0.0138 (0.35)
0.0125 (0.32) 0.0091 (0.23)
8 0
0.0500 (1.27) 0.0157 (0.40)
Revision History
Location Data Sheet changed from REV. A to REV. B. Page
Deletion of WAFER TEST LIMITS Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Deletion of DICE CHARACTERISTICS Images . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Edits to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
-16-
REV. B

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